7.000 ton PolySilicon manufacturing Plant
Solar Polysilicon Manufacturing Plant
- Capacity: 7.000 ton/year
- Beginning Year of Construction: 2009
- Product Purity: 99.9999999%
- Type: TCS-Siemens Type
- Commissioning Year: 2011
- Stop Year: 2013
- Product: Chunk Polysilicon
Process of the Plant
- Gasification: MG-Si HCL reacts MG-Si (purity 95~99.5%) with HCL to produce TCS, DCS, STC gases.
- Distillation Process (Composition and Distillation of TCS): the distillation system separates the TCS, DCS and STC off-gases and purifies the TCS.
- CVD Process (Deposition of Polysilicon): polysilicon deposition occurs when purified TCS gas is introduced into a CVD reactor. The silicon in the TCS molecule is deposited onto a heated polysilicon filament which grows over to more than 100-mm in diameter.
- Off-Gas Recovery Process: collected off-gases (HCL, H2) from the gasification, distillation and CVD processes are recycled to produce more TCS.
- Packing Process: Packing grown polysilicon rods are harvested and broken into chunks. Packaged polysilicon is then ready to be shipped.
Numbers of the Plant
Plant lot: 373.800 sqm
Building Area: 50.740 sqm
Annex: 2.215 sqm
CVD: Chemical Vapor Deposition Reactor
A CVD is the fundamental equipment in manufacturing of polysilicon, decomposing high-purity refined TCS (Trichlorosilane) gas and extracting high-purity silicon through chemical reaction. It decomposes gas through a gas-phase chemical reaction by using external energy source. Through the gas-phase chemical reaction, the chemical vapor deposition reactor forms silicon thin film on the inner structured filament, making the size bigger.