Silicon melting point: 1420 °C; Silicon density 2.33 g/cm3;
When silicon is molten the lower heating zone turns off and the heat-insulating diaphragm partially opens. The loading pan radiates heat to the heat exchanger. The process of crystallization of silicon begins.
Then, by controlling the opening of the diaphragm and the temperature of the upper and lateral heating zones, silicon continues to crystallize (bottom to top).
The structure of the thermal element system is made with 3 heating zones designed to maintain isothermal solidification as stable as possible. A special mechanism (“diaphragm”) located under the crucible is aimed at the generation of controlled heat loss during crystallization.
Heating zones can be completely dismantled, therefore their technical service is much simplified. Potential breakage of the crucible can be detected using thermocouples, embedded in emergency pipes for draining molten silicon.
Argon injection is performed on the surface of silicon.
Dimensions and Weight:
Length: 4720 mm
Width: 4270 mm
Height: 5490 mm
Weight: 12.000 kg
Ingot data after crystallization:
Format (L x W): 840x 840 mm
Height: 240-280 mm
Weight: max. 450 kg